STP55NF06 Datasheet



This STP55NF06 is Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. STP55NF06 Features • Typical rds(on) = 0.015 w• Exceptional dv/dt capability• 100% avalanche tested• Surface-mounting d2pak (to-263) power package in tube (no suffix) or in tape & reel (suffix “t4”)• Through-hole i²pak (to-262) power package in tube (suffix “-1") STP55NF06 Applications • High current, high switching speed• Motor control, audio amplifiers• Dc-dc & dc-ac converters• Automotive


[{"Name":"Transistor Polarity","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage ","Value":"60 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V "},{"Name":"Continuous Drain Current","Value":"50 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.018 Ohms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Mounting Style ","Value":"Through Hole "},{"Name":"Package / Case ","Value":"TO-220 "},{"Name":"Packaging","Value":"Tube "}]

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