HomedatasheetSTP5NK100

STP5NK100 Datasheet

MOSFET
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Description

The STP5NK100 is SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. STP5NK100 Features • Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitances• Very good manufacturing repeatibility STP5NK100 Applications • Switching application
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"1000 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current","Value":"3.5 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"3.7 Ohms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220 "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

ROHM
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