HomedatasheetSTP60NF06L

STP60NF06L Datasheet

MOSFET
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Description

This STP60NF06L Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. STP60NF06L Features • Exceptional dv/dt capability• 100% avalanche tested• Application oriented characterization• 175C operating range• Low threshold drive
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"60 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 15 V "},{"Name":"Continuous Drain Current","Value":"60 A "},{"Name":"Drain-Source On Resistance","Value":"14 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220"},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

SILICON LABORATORIES
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