STP8NK80 Datasheet

FETs - Single


The STP8NK80 series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. STP8NK80 Features • typical rds(on) = 1.3 w• extremely high dv/dt capability• 100% avalanche tested• gate charge minimized• very low intrinsic capacitances• very good manufacturing repeatibility STP8NK80 Applications • high current, high speed switching• ideal for off-line power supplies,adaptors and pfc• lighting


[{"Name":"Drain to Source Voltage (Vdss)","Value":"800V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"6.2A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"1.5 Ohm @ 3.1A, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"4.5V @ 100μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"46nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"1320pF @ 25V"},{"Name":"Power - Max","Value":"30W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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