STW10NK80Z Datasheet



STW10NK80Z These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. STW10NK80Z Features • Extremely high dv/dt capability• 100% avalanche tested• Gate charge minimized• Very low intrinsic capacitances• Very good manufacturing repeability STW10NK80Z Applications • Switching application


[{"Name":"Drain-Source Breakdown Voltage","Value":"800 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V"},{"Name":"Continuous Drain Current","Value":"9 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.9 Ohms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Fall Time","Value":"17 ns"},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"9.6 S"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""}]

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