Manufacturer
Description
The STW25NM60N is FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. STW25NM60N Features • The worldwide best RDS(on)*area amongst the fast recovery diode devices• 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance• Extremely high dv/dt and avalanche capabilities STW25NM60N Applications • Switching applications
Features
Parameters
[{"Name":"Transistor Polarity ","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage","Value":"600 V "},{"Name":"Gate-Source Breakdown Voltage ","Value":"+/- 25 V "},{"Name":"Continuous Drain Current ","Value":"20 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.14 Ohms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature ","Value":"+ 150 C "},{"Name":"Mounting Style ","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-247 "},{"Name":"Packaging","Value":"Tube "}]
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