TK8A60DA Datasheet

Field Effect Transistor Silicon N Channel MOS Type


Switching Regulator Applications

•  Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.)
•  High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.)
•  Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
•  Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)



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