HomedatasheetTLP250

TLP250 Datasheet

TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
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Description

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector.This unit is 8−lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. The CA3140A and CA3140 are intended for operation at supply voltages up to 36V (±18V). Features • Input Threshold Current : IF=5mA(MAX)• Supply Current(ICC) : 11mA(MAX)• Supply Voltage(VCC) : 10~35V• Output Current(IO) : ±2.0A(MAX)• Switching Time(tpLH/tpHL) : 0.5μs(MAX)• Isolation Voltage : 2500Vrms• UL Recognized : UL1577,File No.E67349• Option(D4) VDE Approved : DIN VDE0884/06.92 Certificate No.76823 Maximum Operating Insulation Voltage : 630VPK Highest Permissible Over Voltage : 4000VPK• Creepage Distance : 6.4mm(MIN) Clearance : 6.4mm(MIN)
Features

Parameters

[{"Name":"Input current, on","Value":"7 to 10 mA"},{"Name":"Input Voltage, OFF","Value":"0.8 V( MAX)"},{"Name":"Supply Voltage ","Value":"15 to 30 V"},{"Name":"Operating frequency","Value":"25 kHz"},{"Name":"Peak Output Current","Value":"±0.5 A"},{"Name":"Operating Temperature","Value":"-20 to 85 °C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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