TLP598GAF Datasheet

MOSFET Output Optocouplers


The TLP598GAF consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo − MOS FET in a six lead plastic DIP package (DIP6). The TLP598GAFAis a bi-directional switch which can replace mechanical relays in many applications. TLP598GAF Features • Peak off − state voltage: 400 V (min.) • On− state current: 150 mA (max.) (A connection) • On− state resistance: 12 Ω (max.) (A connection) • Isolation voltage: 2500 Vrms (min.) (A connection)


[{"Name":"Forward Current","Value":"7.5 mA"},{"Name":"Maximum Operating Temperature","Value":"+ 85 C"},{"Name":"Minimum Operating Temperature","Value":"- 40 C"},{"Name":"Maximum Forward Diode Voltage","Value":"1.48 V"},{"Name":"Maximum Input Diode Current","Value":"20 mA"},{"Name":"Maximum Reverse Diode Voltage","Value":"5 V"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

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