HomedatasheetW9812G6JH

W9812G6JH Datasheet

Memory
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Description

W9812G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as2M words× 4 banks × 16 bits. W9812G6JH delivers a data bandwidth of up to 200M words persecond. For different application, W9812G6JH is sorted into the following speed grades: -5/-6/-6I/-6Aand -75. The -5 is compliant to the 200MHz/CL3 specification. The -6/-6I/-6A is compliant to the166MHz/CL3 specification (the -6I industrial grade, -6A automotive grade which is guaranteed tosupport -40°C ~ 85°C). The -75 is compliant to the 133MHz/CL3 specification.Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can beaccessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVEcommand. Column addresses are automatically generated by the SDRAM internal counter in burstoperation. Random column read is also possible by providing its address at each clock cycle. Themultiple bank nature enables interleaving among internal banks to hide the precharging time.By having a programmable Mode Register, the system can change burst length, latency cycle,interleave or sequential burst to maximize its performance. W9812G6JH is ideal for main memory inhigh performance applications. W9812G6JH Features • 3.3V± 0.3V Power Supply• Up to 200 MHz Clock Frequency• 2,097,152 Words× 4 banks × 16 bits organization• Self Refresh Mode•CAS Latency: 2 and 3• Burst Length: 1, 2, 4, 8 and full page• Burst Read, Single Writes Mode• Byte Data Controlled by LDQM, UDQM• Auto-precharge and Controlled Precharge• 4K Refresh cycles / 64 mS•Interface: LVTTL• Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
Features

Parameters

[{"Name":"Format - Memory","Value":"RAM"},{"Name":"Memory Type","Value":"SDRAM"},{"Name":"Memory Size","Value":"128M (8M x 16)"},{"Name":"Speed","Value":"166MHz"},{"Name":"Interface","Value":"Parallel"},{"Name":"Voltage - Supply","Value":"3 V ~ 3.6 V"},{"Name":"Operating Temperature","Value":"-40°C ~ 85°C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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