HomedatasheetY100N10E

Y100N10E Datasheet

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
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Description

TMOS E-FET™ Power Field Effect transistor
N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

Features

Parameters


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MOTOROLA => FREESCALE
Warm Hint

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