HomedatasheetZXT13P12DE6TC

ZXT13P12DE6TC Datasheet

SuperSOT4™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
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Description

SUMMARY
VCEO=-12V; RSAT = 37m ; IC= -4A

DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

FEATURES
• Extremely Low Equivalent On Resistance
• Extremely Low Saturation Voltage
• hFE characterised up to 15A
• IC=4A Continuous Collector Current
• SOT23-6 package

APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

 

Features

Parameters


Manufacturer information

ZETEX => DIODES
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